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Bulletin I25196 rev. B 01/00 ST1200C..K SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case A-24 (K-PUK) High profile hockey-puk 1650A Typical Applications DC motor controls Controlled DC power supplies AC controllers case style A-24 (K-PUK) Major Ratings and Characteristics Parameters IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz It 2 ST1200C..K 1650 55 3080 25 30500 32000 4651 4250 1200 to 2000 Units A C A C A A KA2s KA2s V s C @ 50Hz @ 60Hz VDRM /VRRM tq TJ typical 200 - 40 to 125 www.irf.com 1 ST1200C..K Series Bulletin I25196 rev.B 01/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 12 14 ST1200C..K 16 18 20 V DRM/V RRM, max. repetitive peak and off-state voltage V 1200 1400 1600 1800 2000 VRSM , maximum nonrepetitive peak voltage V 1300 1500 1700 1900 2100 I DRM /I RRM max. @ TJ = TJ max mA 100 On-state Conduction Parameter I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current ST1200C..K 1650 (700) 55 (85) 3080 30500 32000 25700 26900 Units Conditions A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA 2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. I 2t Maximum I t for fusing 2 4651 4250 3300 3000 I 2 t Maximum I2t for fusing 46510 0.91 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. V T(TO) 1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current V 1.01 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), T J = TJ max. m 0.19 1.73 600 mA 1000 T J = 25C, anode supply 12V resistive load V (I > x IT(AV) ),TJ = TJ max. I = 4000A, TJ = TJ max, t = 10ms sine pulse pk p 0.21 2 www.irf.com ST1200C..K Series Bulletin I25196 rev.B 01/00 Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td t Typical delay time Typical turn-off time ST1200C..K 1000 1.9 Units Conditions A/s Gate drive 20V, 20, tr 1s TJ = TJ max, anode voltage 80% VDRM Gate current 1A, di g/dt = 1A/s s Vd = 0.67% VDRM, T J = 25C ITM = 550A, TJ = TJ max, di/dt = 40A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, t = 500s p q 200 Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current ST1200C..K 500 100 Units Conditions V/s mA T J = TJ max. linear to 80% rated V DRM TJ = TJ max, rated VDRM /V RRM applied Triggering Parameter PGM IGM +VGM -VGM Maximum peak gate power ST1200C..K 16 3 3.0 20 Units Conditions T J = TJ max, t 5ms W A p PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. 200 IGT DC gate current required to trigger 100 50 1.4 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 1.1 0.9 T J = TJ max, f = 50Hz, d% = 50 T J = TJ max, t 5ms p V 5.0 MAX. 200 3.0 10 0.25 mA V V mA TJ = TJ max, tp 5ms T J = - 40C T J = 25C T J = 125C T J = - 40C T J = 25C T J = 125C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = TJ max www.irf.com 3 ST1200C..K Series Bulletin I25196 rev.B 01/00 Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range ST1200C..K -40 to 125 -40 to 150 0.042 0.021 0.006 0.003 24500 (2500) Units C Conditions RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10% DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled K/W N (Kg) g wt Approximate weight Case style 425 A-24 (K-PUK) See Outline Table RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Sinusoidal conduction Conduction angle Single Side Double Side 180 120 90 60 30 0.003 0.004 0.005 0.007 0.012 0.003 0.004 0.005 0.007 0.012 Rectangular conduction Units Single Side Double Side 0.002 0.004 0.005 0.007 0.012 0.002 0.004 0.005 0.007 0.012 K/W TJ = TJ max. Conditions Ordering Information Table Device Code ST 120 1 2 0 3 C 4 20 5 K 6 1 7 8 1 2 3 4 5 6 7 - Thyristor Essential part number 0 = Converter grade C = Ceramic Puk Voltage code: Code x 100 = VRRM (See Voltage Rating Table) K = Puk Case A-24 (K-PUK) 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection) 4 www.irf.com ST1200C..K Series Bulletin I25196 rev.B 01/00 Outline Table 1 (0.04) MIN. TWO PLACES 2 7. 5 ( 1. 0 8 ) M A X . 47.5 (1.87) DIA. MAX. TWO PLACES PIN RECEPTACLE AMP. 60598-1 67 (2.6) DIA. MAX. 20 5 7 4 . 5 (2 . 9 ) D I A . M A X . 4.75 (0.2) NOM. 44 (1.73) 2 HOLES DIA. 3.5 (0.14) x 2.1 (0.1) DEEP Case Style A-24 (K-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) CREPAGE DESTANCE 28.88 (1.137) MIN. STRIKE DISTANCE 17.99 (0.708) MIN. Maximum Allowable Heatsink Temperature (C) 130 120 110 100 90 80 70 60 50 40 0 200 Maximum Allowable Heatsink Temperature (C) ST1200C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W Conduction Angle 30 60 90 120 180 400 600 800 1000 1200 130 120 110 100 90 80 70 60 50 40 30 20 0 ST1200C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W Conduction Period 30 60 90 120 180 400 800 1200 DC 1600 2000 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Average On-state Current (A) Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST1200C..K Series Bulletin I25196 rev. B 01/00 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) 130 120 110 100 90 80 70 60 50 40 30 0 400 ST1200C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W Conduction Angle 130 120 110 100 90 80 70 60 50 40 30 20 30 ST1200C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W Conduction Period 30 60 90 120 180 2000 60 90 120 180 0 DC 800 1200 1600 600 1200 1800 2400 3000 3600 Average On-state Current (A) Fig. 4 - Current Ratings Characteristics Average On-state Current (A) Fig. 3 - Current Ratings Characteristics Maximum Allowable Heatsink Temperature (C) 4000 3500 3000 2500 2000 1500 1000 500 0 0 Maximum Allowable Heatsink Temperature (C) 180 120 90 60 30 RMS Limit 5000 4000 3000 2000 1000 0 0 600 1200 1800 2400 3000 3600 Average On-state Current (A) Fig. 6- On-state Power Loss Characteristics DC 180 120 90 60 30 RMS Limit Conduction Period ST1200C..K Series T J = 125C Conduction Angle ST1200C..K Series T J = 125C 400 800 1200 1600 2000 Average On-state Current (A) Fig. 5- On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 28000 26000 24000 22000 20000 18000 16000 14000 12000 1 Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V R R M Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 32000 30000 28000 26000 24000 22000 20000 18000 16000 14000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied R a t e d V R R MR e a p p l i e d ST1200C..K Series 10 100 ST1200C..K Series 0.1 Pulse Train Duration (s) 12000 0.01 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6 www.irf.com ST1200C..K Series Bulletin I25196 rev. B 01/00 10000 Instantaneous On-state Current (A) 1000 TJ = 25C T J = 125C ST1200C..K Series 100 0.5 1 1.5 2 2.5 3 Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics Transient Thermal Impedance Z thJ-hs(K/W) 0.1 Steady State Value R thJ-hs = 0.042 K/W (Single Side Cooled) R thJ-hs = 0.021 K/W (Double Side Cooled) (DC Operation) 0.01 ST1200C..K Series 0.001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 100 Instantaneous Gate Voltage (V) 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 s (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (a ) (b) Tj=-40 C Tj= 25 C 1 VGD 0.1 0.001 IG D D e v i c e : S T 1 2 0 0 C . . K S e r i e s 0.01 0.1 1 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics Tj= 125 C (1) (2) (3) Frequency Limited by PG(AV) 10 100 www.irf.com 7 |
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